Method for fabricating semiconductor devices with reduced junction diffusion
US8053340
Saved in:
Main Authors: | COLOMBEAU, BENJAMIN, YEONG, SAI HOOI, BENISTANT, FRANCIS, INDAJANG, BANGUN, CHAN, LAP |
---|---|
Other Authors: | CHEMICAL & BIOMOLECULAR ENGINEERING |
Format: | Patent |
Published: |
2012
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32802 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Method for fabricating semiconductor devices with shallow diffusion regions
by: TAN, DEXTER XUEMING, et al.
Published: (2012) -
Defect Engineering in the formation of Ultra-shallow junctions for advanced nano-metal-oxide-semiconductor technology
by: YEONG SAI HOOI
Published: (2011) -
Method for forming a shallow junction region using defect engineering and laser annealing
by: ONG, KUANG KIAN, et al.
Published: (2012) -
The impact of boron halo on phosphorus junction formation and stability
by: Yeong, S.H., et al.
Published: (2014) -
The impact of boron halo on phosphorus junction formation and stability
by: Yeong, S.H., et al.
Published: (2014)