Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxy
10.1063/1.2150259
Saved in:
Main Authors: | Liu, H.F., Dixit, V., Xiang, N. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55117 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells
by: Dixit, V., et al.
Published: (2014) -
Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing
by: Liu, H.F., et al.
Published: (2014) -
Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
by: Dang, Y. X., et al.
Published: (2013) -
Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron
by: Dixit, V., et al.
Published: (2014) -
Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
by: Ng, T. K., et al.
Published: (2013)