Electrical evaluation of laser annealed junctions by Hall measurements
10.1016/j.tsf.2004.05.024
Saved in:
Main Authors: | Poon, C.H., Tan, L.S., Cho, B.J., Ng, K.T., Bhat, M., Chan, L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55818 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Formation of ultra-shallow p +/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
by: Ong, K.K., et al.
Published: (2014) -
Formation of Ultra-Shallow Junctions in Silicon- Germanium by Pulsed Laser Annealing
by: ABIDHA BEGUM
Published: (2010) -
Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition
by: Tan, C.F., et al.
Published: (2014) -
Ultrashallow junction formation for next generation MOS technology
by: POON CHYIU HYIA, DEBORA
Published: (2010) -
Pulsed laser annealing of ultra-shallow junctions in silicon-germanium
by: Tan, L.S., et al.
Published: (2014)