Application of molecular dynamics for low-energy ion implantation in crystalline silicon
10.1116/1.2137333
Saved in:
Main Authors: | Chan, H.Y., Srinivasan, M.P., Montgomery, N.J., Mulcahy, C.P.A., Biswas, S., Gossmann, H.-J.L., Harris, M., Nordlund, K., Benistant, F., Ng, C.M., Gui, D., Chan, L. |
---|---|
Other Authors: | CHEMICAL & BIOMOLECULAR ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/63500 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon
by: Chan, H.Y., et al.
Published: (2014) -
The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
by: Chan, H.Y., et al.
Published: (2014) -
The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
by: Chan, H.Y., et al.
Published: (2014) -
Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature
by: Chan, H.Y., et al.
Published: (2014) -
Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
by: Chan, H.Y., et al.
Published: (2014)