Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide system
10.1063/1.359844
Saved in:
Main Authors: | Choi, W.K., Chan, Y.M., Ah, L.K., Loh, F.C., Tan, K.L., Ramam, A. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80368 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Structural and electrical characterisations of rapid thermal annealed thin silicon oxide films on silicon
by: Chan, Y.M., et al.
Published: (2014) -
X-ray photoelectron spectroscopy study of rapid thermal annealed silicon-silicon oxide systems
by: Choi, W.K., et al.
Published: (2014) -
Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system
by: Chim, W.K., et al.
Published: (2014) -
Electrical and structural properties of rapid thermal annealed amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014) -
Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide films
by: Choi, W.K., et al.
Published: (2014)