Reliability improvement to copper damascene structures using buried capping layer
Advanced Metallization Conference (AMC)
Saved in:
Main Authors: | Yiang, K.Y., Yoo, W.J., Krishnamoorthy, A. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84134 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Reliability improvement using buried capping layer in advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014) -
Impact of buried capping layer on electrical stablity of advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014) -
Impact of buried capping layer on TDDB physics of advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014) -
Study of leakage mechanisms of the copper/Black Diamond™ damascene process
by: Yiang, K.Y., et al.
Published: (2014) -
Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments
by: Krishnamoorthy, A., et al.
Published: (2014)