High-resolution channeling contrast microscopy of compositionally graded Si1-XGeX layers
10.1016/S0168-583X(03)01090-5
Saved in:
Main Authors: | Seng, H.L., Osipowicz, T., Sum, T.C., Breese, M.B.H., Watt, F., Tok, E.S., Zhang, J. |
---|---|
Other Authors: | PHYSICS |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/98741 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopy
by: Seng, H.L., et al.
Published: (2014) -
High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structures
by: Osipowicz, T., et al.
Published: (2014) -
Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films
by: Natarajan, A., et al.
Published: (2014) -
Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure
by: Gao, F., et al.
Published: (2014) -
Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire
by: Whang, S.J., et al.
Published: (2014)