ENERGY BAND STRUCTURES AND OPTICAL PROPERTIES OF WIDE-GAP III-V SEMICONDUCTORS

by YEO YEE CHIA
Published 2020

Electronic band structure and effective mass parameters of Ge1−xSnx alloys

by Low, Kain Lu, Yang, Yue, Han, Genquan, Fan, Weijun, Yeo, Yee-Chia
Published 2013

InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

by D’Costa, Vijay Richard, Loke, Wan Khai, Zhou, Qian, Yoon, Soon Fatt, Yeo, Yee-Chia
Published 2016

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

by D'Costa, Vijay Richard, Tan, Kian Hua, Jia, Bo Wen, Yoon, Soon Fatt, Yeo, Yee-Chia
Published 2015

Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy

by Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt, Owen, Man Hon Samuel, Yeo, Yee-Chia
Published 2013

AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxi...

by Yeo, Yee-Chia, Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Liu, Wei, Tan, Leng Seow, Chen, Kevin Jing
Published 2013

High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

by Xu, Shengqiang, Wang, Wei, Huang, Yi-Chiau, Dong, Yuan, Masudy-Panah, Saeid, Wang, Hong, Gong, Xiao, Yeo, Yee-Chia
Published 2019

GeSn-on-insulator substrate formed by direct wafer bonding

by Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia
Published 2016

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

by Richard D'Costa, Vijay, Subramanian, Sujith, Li, Daosheng, Wicaksono, Satrio, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia
Published 2014

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

by Ivana, Subramanian, Sujith, Owen, Man Hon Samuel, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
Published 2013

Thermal stability of germanium-tin (GeSn) fins

by Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Masudy-Panah, Saeid, Tan, Chuan Seng, Tok, Eng Soon, Gong, Xiao, Yeo, Yee-Chia
Published 2018

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

by Hu, Hailong., Guo, Pengfei, Yang, Yue, Cheng, Yuanbing, Han, Genquan, Pan, Jisheng, Ivana, Zhang, Zheng, Shen, Zexiang, Chia, Ching Kean, Yeo, Yee-Chia
Published 2013

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free pr...

by Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
Published 2013

GeSn lateral p-i-n photodetector on insulating substrate

by Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2019

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

by Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Published 2019

Strain relaxation of germanium-tin (GeSn) fins

by Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2018

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

by Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Dong, Yuan, Lee, Kwang Hong, Wicaksono, Satrio, Liang, Gengchiau, Yoon, Soon-Fatt, Antoniadis, Dimitri, Yeo, Yee-Chia, Gong, Xiao
Published 2019

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate

by Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2020