Reliability study of copper wire bonding and through silicon via
Interconnects are necessary for the electrical connection of an integrated circuits (IC). Therefore, its quality and reliability are vitally important to ensure that a device is working as it is intendedly designed. The continued scaling of devices and the desire for higher functionality and capabil...
Saved in:
Main Author: | Chan, Marvin Jiawei |
---|---|
Other Authors: | Tan, Chuan Seng |
Format: | Thesis-Doctor of Philosophy |
Language: | English |
Published: |
Nanyang Technological University
2020
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/142271 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Reliability of copper wire bonding
by: Ang, Joash Wei Qiang
Published: (2012) -
Process induced reliability of through silicon via
by: Zhang, Jiye
Published: (2014) -
Thermal simulations of 3D through silicon via-based ion traps
by: Bi, Xinwen
Published: (2022) -
Design, fabrication, and characterization of three-dimensional embedded capacitor in through-silicon via
by: Lin, Ye
Published: (2019) -
Fabrication and characterization of silicon-on-insulator using low temperature wafer bonding
by: Yu, Weibo
Published: (2008)