Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain

• المؤلفون الرئيسيون: Burt, Daniel, Zhang, Lin, Jung, Yongduck, Joo, Hyo-Jun, Kim, Youngmin, Chen, Melvina, Son, Bongkwon, Fan, Weijun, Ikonic, Zoran, Tan, Chuan Seng, Nam, Donguk
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; Semiconductor Alloys; Compressive Strain
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/165003
• المؤسسة: Nanyang Technological University

Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, the current methods of introducing a sizable tensile strain into GeSn lasers require complex fabrication processes, thus reducing the viability of the lasers for practical applications. The geometric st...