GeSn/Ge multiquantum-well vertical-cavity surface-emitting p-i-n structures and diode emitters on a 200 mm Ge-on-insulator platform

• Main Authors: Chen, Qimiao, Jung, Yongduck, Zhou, Hao, Wu, Shaoteng, Gong, Xiao, Huang, Yi-Chiau, Lee, Kwang Hong, Zhang, Lin, Nam, Donguk, Liu, Jian, Luo, Jun-Wei, Fan, Weijun, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics; Vertical Cavity; Light Sources
• Online Access: https://hdl.handle.net/10356/167163
• Institution: Nanyang Technological University

An efficient monolithically integrated light source with complementary metal-oxide semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emi...