Biaxial strain effect on band structures and optical properties of GeSn/Ge quantum well
With the advancement and proliferation of technology, the use of Si photonics has become prevalent to realise the high performance of computers and energy efficient data transfer [1]. The use of Grp3-5 semiconductors has been a very promising prospect in various applications such as CMOS technology,...
Saved in:
Main Author: | Ting, Shi En |
---|---|
Other Authors: | Fan Weijun |
Format: | Final Year Project |
Language: | English |
Published: |
Nanyang Technological University
2024
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/177132 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
by: Richard D'Costa, V., et al.
Published: (2014) -
The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
by: Roohan Thirayatorn, et al.
Published: (2020) -
Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well
by: Fan, Weijun, et al.
Published: (2020) -
Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
by: Burt, Daniel, et al.
Published: (2022) -
Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
by: Burt, Daniel, et al.
Published: (2023)