Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Yip, Kim Hong.
مؤلفون آخرون:	Yoon, Soon Fatt
التنسيق:	Theses and Dissertations
منشور في:	2008
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
الوصول للمادة أونلاين:	http://hdl.handle.net/10356/3902
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Characterization of InP based high electron mobility transistor structures grown by solid source MBE
بواسطة: Too, Patrick Heng Kwee.
منشور في: (2008)

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
بواسطة: Sun, Z. Z., وآخرون
منشور في: (2011)

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
بواسطة: Agrawal, M., وآخرون
منشور في: (2011)

Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors
بواسطة: Radhakrishnan, K., وآخرون
منشور في: (2008)

Study of surface microtopography of InAlAs/InP heterostructures grown by MBE
بواسطة: Taijing, L., وآخرون
منشور في: (2014)

Two-dimensional simulation and design of high electron mobility transistors
بواسطة: Kam, Adele Hwei Ting
منشور في: (2008)

Fabrication of InGaP high electron mobility transistors by electron beam technique
بواسطة: Gay, Boon Ping.
منشور في: (2008)

Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
بواسطة: Mah, Kia Woon
منشور في: (2008)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
بواسطة: Lee, Wei Yi.
منشور في: (2009)

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon
بواسطة: Tham, Wai Hoe
منشور في: (2016)

Growth and characterization of metamorphic layer structures for high electron mobility transistors
بواسطة: Yuan, Kaihua.
منشور في: (2008)

Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
بواسطة: Li, Yang, وآخرون
منشور في: (2015)

Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures
بواسطة: Du, A.Y., وآخرون
منشور في: (2014)

Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
بواسطة: Sun, Lu
منشور في: (2008)

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon
بواسطة: Syaranamual, Govindo Joannesha
منشور في: (2018)

The effects of silicon doping on the structural and electrical properties of III-nitrides grown by MBE
بواسطة: Chakraborti Sudipta
منشور في: (2017)

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
بواسطة: Li, Yang, وآخرون
منشور في: (2015)

Fabrication and charaterization of InP-based high election mobility transistors
بواسطة: Liu, Yuwei
منشور في: (2011)

Amorphous metal oxide thin film transistors for printable electronics
بواسطة: Chen, Yuxin
منشور في: (2015)

Printed high mobility AMOS thin film transistors
بواسطة: Evanniles, Edbert
منشور في: (2020)

Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
بواسطة: Yoon, Soon-Fatt.
منشور في: (2011)

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers
بواسطة: Khai, L.W., وآخرون
منشور في: (2021)

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors
بواسطة: Ong, Beng S., وآخرون
منشور في: (2013)

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers
بواسطة: Tan, Leng Seow, وآخرون
منشور في: (2014)

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers
بواسطة: Tan, Leng Seow, وآخرون
منشور في: (2014)

Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
بواسطة: Yang, Hong
منشور في: (2008)

MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors
بواسطة: CHEN WENQIAN
منشور في: (2010)

Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
بواسطة: Kulkarni, Mohit Rameshchandra, وآخرون
منشور في: (2019)

MBE growth and properties of Cr-doped ZnTe on GaAs(001)
بواسطة: Hou, X.J., وآخرون
منشور في: (2014)

Graphene field-effect transistor based high sensitive sensor
بواسطة: Zhao, Haoyu
منشور في: (2022)

Characterisation of compound semiconductors grown by molecular beam epitaxy
بواسطة: Zhang, Peng Hua
منشور في: (2009)

Low frequency noise measurement in the MOS transistor
بواسطة: Thet, Kyaw Win.
منشور في: (2011)

Factors affecting the shape of MBE-grown laterally aligned Fe nanowires
بواسطة: Lok, Shu K., وآخرون
منشور في: (2013)

DEFECT STUDIES OF MBE GROWN ALGAAS/GAAS AND INGAAS/GAAS MATERIALS
بواسطة: DU AN YAN
منشور في: (2020)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
بواسطة: Manvi Agrawal
منشور في: (2013)

Nanocellulose for green electronics
بواسطة: Chen, Kenneth Wai Yip
منشور في: (2019)

Physics-based compact modeling of quasi-ballistic transistors
بواسطة: Ajaykumar, Arjun
منشور في: (2017)

Bias temperature instability of nano-scale silicon transistors
بواسطة: Ho, Terence Jun Jie
منشور في: (2014)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
بواسطة: Han, Zhiyong.
منشور في: (2008)

Gate dielectric surface modification in organic field-effect transistors
بواسطة: Feng, Chengang
منشور في: (2012)