Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).

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書目詳細資料
主要作者:	Yip, Kim Hong.
其他作者:	Yoon, Soon Fatt
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	http://hdl.handle.net/10356/3902
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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