Application of phase shift masking to sub-micron contact level lithography

Application of phase shift masking to sub-micron contact level lithography

As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various ty...

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書目詳細資料
主要作者:	Choo, Lay Cheng.
其他作者:	Tam, Siu Chung
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	http://hdl.handle.net/10356/4158
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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