GaAs/AlGaAs (111)A-based and InGaAsP based quantum well infrared photodetectors
In this thesis, a (111) A-oriented GaAs/AlGaAs QWIP and an InGaAsP/InGaAsP/InGaAs step QWIP on InP substrate have been investigated.
Saved in:
Main Author: | Li, Hui |
---|---|
Other Authors: | Mei Ting |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/4630 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
GaAs/AlAs/AlGaAs quantum well infrared photodetector
by: Fan, Weijun
Published: (2008) -
Study of quantum phenomena in intermixed GaAs/AlGaAs and InGaAs/InGaAsP quantum well structures
by: Au Yeung, Tin Cheung.
Published: (2008) -
Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy
by: Li, H., et al.
Published: (2013) -
Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009) -
Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
by: Loke, Wan Khai.
Published: (2008)