Optimizing of TiN barrier properties for CNT interconnects

Optimizing of TiN barrier properties for CNT interconnects

This report aims to investigate the various parameters on optimizing of the Titanium Nitride (TiN) thin films to achieve low resistivity, fabrication of four point probe flip chip design and measurement of the flip chip interconnection resistance. Three controlled parameters are experimented in the...

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書目詳細資料
主要作者:	Ng, Anthony Tian Shi
其他作者:	Tay Beng Kang
格式:	Final Year Project
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	http://hdl.handle.net/10356/50111
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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