Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor

Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor

It was demonstrated that the common emitter current gain of bipolar transistors could be improved by replacing the emitter metal contact by a highly doped polysilicon layer. A number of works, both theoretical and experimental, investigating this effect, have been published. In all these studies, th...

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書目詳細資料
主要作者:	Leow, Yong Faitt.
其他作者:	Wong, Chee Cheong
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	http://hdl.handle.net/10356/5968
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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