Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

• Main Authors: Lee, Kwang Hong, Bao, Shuyu, Lin, Yiding, Wang, Yue, Li, Wei, Zhang, Lin, Michel, Jurgen, Fitzgerald, Eugene A., Tan, Chuan Seng, Anantha, P.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Germanium; Silicon; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/81289; http://hdl.handle.net/10220/47457
• Institution: Nanyang Technological University

Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material...