Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects

• Main Authors: Tan, Cher Ming, Zhang, Guan, Gan, Zhenghao
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/91223; http://hdl.handle.net/10220/6008
• Institution: Nanyang Technological University

Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin film. These mechanisms are electron-wind force induced migration, thermomigration due to temperature gradient, stressmigration due to stress gradient, and surface migration due to surface tension in...