Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation

• المؤلفون الرئيسيون: Xu, S., Lai, M. Y., Yakovlev, N. L., Law, S. B., Chen, Z., Ee, Elden Yong Chiang
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials::Metallic materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94597; http://hdl.handle.net/10220/8203

Ternary Ti–Si–N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Diffusion of copper in the barrier layer after annealin...