Effects of Si(001) surface amorphization on ErSi2 thin film

• المؤلفون الرئيسيون: Pey, Kin Leong, Lee, Pooi See, Tan, Eu Jin, Kon, M. L., Zhang, Y. W., Wang, W. D., Chi, Dong Zhi
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99843; http://hdl.handle.net/10220/10497
• المؤسسة: Nanyang Technological University

In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphizati...