Strain Engineering for Enhanced P-channel Field Effect Transistor Performance
Master's
Saved in:
Main Author: | LIU FANGYUE |
---|---|
Other Authors: | NANOENGINEERING PROGRAMME |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/15838 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Strain Engineering for Enhanced Transistor Performance
by: ANG KAH WEE
Published: (2019) -
Novel devices for enhanced CMOS performance
by: CHUI KING JIEN
Published: (2011) -
Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
by: Tan, K.-M., et al.
Published: (2014) -
Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
by: Wang, G.H., et al.
Published: (2014) -
Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
by: Ang, K.-W., et al.
Published: (2014)