Threshold voltage instabilities in MOS transistors with advanced gate dielectrics

Threshold voltage instabilities in MOS transistors with advanced gate dielectrics

Ph.D

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	SHEN CHEN
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	Theses and Dissertations
اللغة:	English
منشور في:	2010
الموضوعات:	MOS, transistor, reliability, characterization, charge trapping, NBTI
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/15856
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Reliability analysis of thin HfO2/SiO2 gate dielectric stack
بواسطة: Samanta, P., وآخرون
منشور في: (2014)

Reliability and characterization for deep sub-micron CMOS devices
بواسطة: CHEN GANG
منشور في: (2010)

Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
بواسطة: Liu, B., وآخرون
منشور في: (2014)

Gate stack engineering of germanium mosfets with high-K dielectrics
بواسطة: WU NAN
منشور في: (2010)

Development and characterization of high-k dielectric/germanium gate stack
بواسطة: XIE RUILONG
منشور في: (2010)

Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
بواسطة: Shen, C., وآخرون
منشور في: (2014)

Understand NBTI mechanism by developing novel measurement techniques
بواسطة: Li, M.-F., وآخرون
منشور في: (2014)

Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
بواسطة: Lim, P.S., وآخرون
منشور في: (2014)

PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
بواسطة: LEE YUN
منشور في: (2019)

A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs
بواسطة: Huang, D., وآخرون
منشور في: (2014)

Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric
بواسطة: Xie, R., وآخرون
منشور في: (2014)

MOS2 FIELD-EFFECT TRANSISTORS WITH SUPERCONDUCTING SN CONTACTS
بواسطة: CAO ZHONGHAN
منشور في: (2019)

Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors
بواسطة: Jie, B.-B., وآخرون
منشور في: (2014)

Negative bias temperature instability on plasma-nitrided silicon dioxide film
بواسطة: Ang, C.-H., وآخرون
منشور في: (2014)

Negative bias temperature instability on plasma-nitrided silicon dioxide film
بواسطة: Ang, C.-H., وآخرون
منشور في: (2014)

Advanced Silicon and Germanium Transistors for Future P-channel MOSFET Applications
بواسطة: LIU BIN
منشور في: (2013)

Investigation of high-K gate dielectrics for advanced CMOS application
بواسطة: YU XIONG FEI
منشور في: (2011)

The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
بواسطة: Yu, X., وآخرون
منشور في: (2014)

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
بواسطة: Yang, T., وآخرون
منشور في: (2014)

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
بواسطة: Ang, D.S., وآخرون
منشور في: (2014)

Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling
بواسطة: Chen, G., وآخرون
منشور في: (2014)

A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance
بواسطة: Toh, E.-H., وآخرون
منشور في: (2014)

AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
بواسطة: LIU CHANG
منشور في: (2010)

STUDY OF GATE VOLTAGE STRESS AND VISIBLE LIGHT IRRADIATION ON MOS2 BASED GAS SENSORS
بواسطة: TONG YU
منشور في: (2017)

Alternative gate dielectrics and application in nanocrystal memory
بواسطة: NG TSU HAU
منشور في: (2010)

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
بواسطة: Lou, C.-L., وآخرون
منشور في: (2014)

Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
بواسطة: Leong, Wei Sun, وآخرون
منشور في: (2020)

I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
بواسطة: Toh, E.-H., وآخرون
منشور في: (2014)

Selected topics on advanced electron devices and their circuit applications
بواسطة: YANG TIAN
منشور في: (2010)

Diagram representations of charge pumping processes in CMOS transistors
بواسطة: Xinyun, H., وآخرون
منشور في: (2014)

Morphology and Charge Transport in Polymer Organic Semiconductor Field-Effect Transistors
بواسطة: ZHUO JINGMEI
منشور في: (2012)

Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region
بواسطة: Toh, E.-H., وآخرون
منشور في: (2014)

Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress
بواسطة: Chim, W.K., وآخرون
منشور في: (2014)

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state
بواسطة: Lingaparthi, R., وآخرون
منشور في: (2023)

Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability
بواسطة: Yu, X., وآخرون
منشور في: (2014)

NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress
بواسطة: Liu, B., وآخرون
منشور في: (2014)

Integration of fluorographene trapping medium in MoS₂-based nonvolatile memory device
بواسطة: Chang, Kai Ping, وآخرون
منشور في: (2021)

TWO-DIMENSIONAL SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FOR ENERGY-EFFICIENT COMPUTING VIA METAL CONTACTS AND FERROELECTRIC GATE STACKS ENGINEERING
بواسطة: CHIEN YU-CHIEH
منشور في: (2024)

Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
بواسطة: Bai, W., وآخرون
منشور في: (2014)

Hysteresis of electronic transport in graphene transistors
بواسطة: Wang, H., وآخرون
منشور في: (2014)