Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions
Ph.D
Saved in:
Main Author: | LIOW TSUNG-YANG |
---|---|
Other Authors: | NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2011
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/28155 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Structural characterisation of polycrystalline SiGe thin film
by: Teh, L.K., et al.
Published: (2014) -
Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices
by: Wong, L.H., et al.
Published: (2014) -
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
by: Liow, T.-Y., et al.
Published: (2014) -
Strain-mediated uniform islands in stacked Ge/Si(001) layers
by: Xu, M., et al.
Published: (2014) -
The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014)