Ultra-low sheet resistance metal/poly-si gate for deep sub-micron CMOS application

Ultra-low sheet resistance metal/poly-si gate for deep sub-micron CMOS application

US6093628

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Bibliographic Details
Main Authors:	LIM, CHONG WEE, PEY, KIN LEONG, SIAH, SOH YUN, LIM, ENG HWA, CHAN, LAP
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Patent
Published:	2012
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/32578
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Institution:	National University of Singapore

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