Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

10.1063/1.1566460

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Bibliographic Details
Main Authors: Xu, M., Tan, C., Li, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55972
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Institution: National University of Singapore

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