Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

10.1063/1.1566460

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書目詳細資料
Main Authors:	Xu, M., Tan, C., Li, M.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/55972
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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