Chemical analysis of etching residues in metal gate stack for CMOS process
Studies in Surface Science and Catalysis
Saved in:
Main Authors: | Wan, S.H., Hui, H.N., Won, J.Y., Bliznetsov, V. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/69599 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
by: Hwang, W.S., et al.
Published: (2014) -
Characterisation of metal pattern density and metal stack composition on chlorine residues from the metal etch process
by: Loong, S.Y., et al.
Published: (2014) -
Study on etching and characterization of advanced gate stack
by: TAN KIAN MING
Published: (2011) -
Advanced gate stack for CMOS nanotechnology
by: LIM EU-JIN ANDY
Published: (2010) -
Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices
by: JOO MOON SIG
Published: (2010)