GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy
10.1149/1.2727391
Saved in:
Main Authors: | Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70408 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
by: Oh, H.J., et al.
Published: (2014) -
Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
by: Balakumar, S., et al.
Published: (2014) -
SiGe amorphization during Ge condensation in silicon germanium on insulator
by: Balakumar, S., et al.
Published: (2014) -
Strain relaxation in SiGe/Si heteroepitaxy
by: Wong, Lydia Helena
Published: (2010) -
Study on SiGe nanowire shape engineering and Ge condensation
by: Ma, F.-J., et al.
Published: (2014)