Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTs
10.1109/PEDS.2013.6527074
Saved in:
Main Authors: | Li, Y., Liang, Y.C., Samudra, G.S., Huang, H., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70594 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014) -
Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devices
by: Samudra, G.S., et al.
Published: (2014) -
Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016) -
Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014) -
Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
by: Huang, H., et al.
Published: (2014)