Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry

• Main Authors: Chin, H.-C., Ling, M.-L., Liu, B., Zhang, X., Li, J., Liu, Y., Hu, J., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Ellipsometry; FinFET; Germanium; OCD; Optical critical dimension; Scatterometry
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70922
• Institution: National University of Singapore

10.1117/12.2013413