Silicides as new electrode/heater for compact integration of phase change memory with CMOS

Silicides as new electrode/heater for compact integration of phase change memory with CMOS

10.1109/VTSA.2010.5488913

Saved in:

Bibliographic Details
Main Authors:	Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71769
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
by: Fang, L.W.-W., et al.
Published: (2014)

Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction
by: Fang, L.W.-W., et al.
Published: (2014)

Phase change memory engineering and integration with CMOS technology
by: FANG WEIWEI LINA
Published: (2011)

Thermally stable fully silicided Hf-silicide metal-gate electrode
by: Park, C.S., et al.
Published: (2014)

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
by: Fang, L.W.-W., et al.
Published: (2014)

Transient phase change effect during the crystallization process in phase change memory devices
by: Yeo, E.G., et al.
Published: (2014)

Optimized electrode arrangement in solar air heater
by: N. Kasayapanand, et al.
Published: (2018)

Thermally stable fully silicided Hf silicide metal gate electrode
by: PARK, CHANG SEO, et al.
Published: (2012)

Investigation of nano-phase change for phase change random access memory
by: Shi, L.P., et al.
Published: (2014)

Breaking the speed limits of phase-change memory
by: Loke, D., et al.
Published: (2014)

Nanoscaling of phase change memory cells for high speed memory applications
by: Wang, W., et al.
Published: (2014)

Superlatticelike dielectric as a thermal insulator for phase-change random access memory
by: Loke, D., et al.
Published: (2014)

Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications
by: Lim, A.E.-J., et al.
Published: (2014)

Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers
by: Lim, A.E.-J., et al.
Published: (2014)

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
by: Fang, L.W.-W., et al.
Published: (2014)

Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures
by: Loke, D., et al.
Published: (2014)

Titanium self-aligned silicide process fabrication issues for deep sub-micron CMOS devices
by: Lahiri, S.K., et al.
Published: (2016)

Parasitic capacitance effect on programming performance of phase change random access memory devices
by: Yeo, E.G., et al.
Published: (2014)

Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation
by: Wong, H.-S., et al.
Published: (2014)

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials
by: Wang, W., et al.
Published: (2014)

Transient phase change analysis of scaling in phase change devices
by: Yeo, E.G., et al.
Published: (2014)

Nano superlattice-like materials as thermal insulators for phase-change random access memory
by: Loke, D., et al.
Published: (2014)

Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
by: Sinha, M., et al.
Published: (2014)

Fast phase transitions induced by picosecond electrical pulses on phase change memory cells
by: Wang, W.J., et al.
Published: (2014)

A dual-loop clock and data recovery circuit with compact quarter-rate CMOS linear phase detector
by: Tan, Yung Sern, et al.
Published: (2013)

Thickness effect on nickel silicide formation and thermal stability for ultra shallow junction CMOS
by: Zhao, F.F., et al.
Published: (2014)

Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stack
by: Gyanathan, A., et al.
Published: (2014)

Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
by: Tang, L. J., et al.
Published: (2012)

The Use of Phase-Change Material on a Thermosyphon Solar Water Heater: Continuous and Gradual Discharging Characteristics
by: Nadjib, Muhammad, et al.
Published: (2022)

Two-bit multi-level phase change random access memory with a triple phase change material stack structure
by: Gyanathan, A., et al.
Published: (2014)

On the morphological changes of Ni- and Ni(Pt)-silicides
by: Lee, P.S., et al.
Published: (2014)

Investigations of high endurance asymmetric phase change random access memory
by: Hock, K.L., et al.
Published: (2014)

Nickel Silicide Interface Engineering for Contact Resistance Reduction in Nanoscale CMOS Technology
by: WONG HOONG SHING
Published: (2011)

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment
by: Lim, P.S.Y., et al.
Published: (2014)

Evolution of surface roughness during metal silicides phase transformation
by: Pang, C. H., et al.
Published: (2012)

RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
by: Boon, Chirn Chye, et al.
Published: (2009)

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
by: Lee, R.T.-P., et al.
Published: (2014)

Crystallization-induced stress in phase change random access memory
by: Li, M.H., et al.
Published: (2014)

Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
by: Jia, Y.M., et al.
Published: (2014)

Work function tuning of metal nitride electrodes for advanced CMOS devices
by: Ren, C., et al.
Published: (2014)