Negative bias temperature instability on plasma-nitrided silicon dioxide film

Negative bias temperature instability on plasma-nitrided silicon dioxide film

Japanese Journal of Applied Physics, Part 2: Letters

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Ang, C.-H., Lek, C.-M., Tan, S.-S., Cho, B.-J., Chen, T., Lin, W., Zhen, J.-G.
مؤلفون آخرون:	ELECTRICAL ENGINEERING
التنسيق:	مقال
منشور في:	2014
الموضوعات:	Interface trap MOS Negative-bias-temperature-instability Thin oxide
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/80781
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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