Negative bias temperature instability on plasma-nitrided silicon dioxide film

• Main Authors: Ang, C.-H., Lek, C.-M., Tan, S.-S., Cho, B.-J., Chen, T., Lin, W., Zhen, J.-G.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Interface trap; MOS; Negative-bias-temperature-instability; Thin oxide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80781
• Institution: National University of Singapore

Japanese Journal of Applied Physics, Part 2: Letters