Optical properties of hydrogenated amorphous silicon carbide films
Diffusion and Defect Data. Pt A Defect and Diffusion Forum
Saved in:
Main Author: | Choi, W.K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80902 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Oxidation study of hydrogenated amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014) -
Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014) -
Effects of hydrogen and rf power on the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014) -
Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014) -
Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014)