Superiority of N2O plasma annealing over O2 plasma annealing for amorphous tantalum pentoxide (Ta2O5) films
Japanese Journal of Applied Physics, Part 2: Letters
Saved in:
Main Authors: | Lau, Wai Shing, Perera, Merinnage Tamara Chandima, Babu, Premila, Ow, Aik Keong, Han, Taejoon, Sandler, Nathan P., Tung, Chih Hang, Sheng, Tan Tsu, Chu, Paul K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81232 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
by: Lau, W.S., et al.
Published: (2014) -
ULTRA-THIN TANTALUM OXIDE FOR 256 MB DRAMS
by: PERERA MERINNAGE TAMARA CHANDIMA
Published: (2020) -
CHARACTERISATIION OF DEFECTS IN TANTALUM PENTOXIDE FILMS BY THERMALLY STIMULATED CURRENT
by: JOSEPHINE L. PREMILA
Published: (2020) -
Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuums
by: Liu, L., et al.
Published: (2014) -
Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2O
by: Choi, W.K., et al.
Published: (2014)