Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

10.1088/0268-1242/28/12/125010

Saved in:

書目詳細資料
Main Authors:	Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82715
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

相似書籍

Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devices
由: Samudra, G.S., et al.
出版: (2014)

AlGaN/GaN power HEMT devices for future energy conversion applications
由: Liang, Y.C., et al.
出版: (2014)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
由: Chang, T.-F., et al.
出版: (2016)

Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
由: Huang, H., et al.
出版: (2014)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
由: Wang, Y.-H., et al.
出版: (2014)

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
由: Yuan, Li, et al.
出版: (2013)

Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTs
由: Li, Y., et al.
出版: (2014)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
由: Huang, H., et al.
出版: (2014)

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
由: Huang, H., et al.
出版: (2014)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
由: Ahmed Salah Hawash Razeen
出版: (2024)

Study on trapping effects in AlGaN/GaN-on-Si devices with vertical interconnect structures
由: Chang, T.-F, et al.
出版: (2020)

Material characterization of AlGaN/GaN based HEMT structures
由: Nur Hidayat Bin Hatwi
出版: (2014)

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
由: Qian, Haisheng, et al.
出版: (2020)

AlGaN/GaN HEMT based gas sensor characterisation and measurement
由: Ng, Ting Siang
出版: (2018)

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
由: Jia, Y., et al.
出版: (2021)

Characterization and analysis of AlGaN/GaN HEMTs on Si for high frequency application
由: Pang, Vanessa Du Juan
出版: (2017)

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
由: Huang, H., et al.
出版: (2014)

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
由: Agrawal, M., et al.
出版: (2011)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
由: Vicknesh, S., et al.
出版: (2014)

Experimental study of AlGaN/GaN HEMT based devicesfor gas sensing applications
由: Jahan, Fina
出版: (2018)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
由: Yin, W.-Y., et al.
出版: (2014)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
由: Liu, Siyu, et al.
出版: (2024)

Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI
由: Gao, Yu
出版: (2021)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
由: Manvi Agrawal
出版: (2013)

Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes
由: Mondal, Ramit Kumar, et al.
出版: (2024)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
由: Ranjan, Kumud, et al.
出版: (2020)

Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
由: Liu, C., et al.
出版: (2014)

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
由: Tan, H. T., et al.
出版: (2024)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
由: Ju, Zhen Gang, et al.
出版: (2016)

Investigation of Rh-based Schottky electrode on AlGaN/GaN heterostructure
由: Tian, F., et al.
出版: (2014)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
由: Sasangka, W. A., et al.
出版: (2017)

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
由: Sun, Z. Z., et al.
出版: (2011)

Compact modeling for GaN HEMT devices
由: Binit Syamal
出版: (2017)

Electronic structures of AlGaN2 nanotubes and AlN-GaN nanotube superlattice
由: Pan, H., et al.
出版: (2014)

Effect of the (1010) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasers
由: Yeo, Y.C., et al.
出版: (2014)

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers
由: Yeo, Y.C., et al.
出版: (2014)

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
由: Yeo, Y.C., et al.
出版: (2014)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
由: Liu, W., et al.
出版: (2014)

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
由: Zhuang, Yihao, et al.
出版: (2024)

AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets
由: Li, Hanchao, et al.
出版: (2025)