Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

10.1109/TED.2009.2021351

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書目詳細資料
Main Authors:	Lee, R.T.P., Chi, D.Z., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	External resistance FinFET Platinum germanosilicide Schottky barrier
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82918
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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