Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

10.1016/j.sse.2013.01.027

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Bibliographic Details
Main Authors: Ding, Y., Cheng, R., Zhou, Q., Du, A., Daval, N., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ion implantation
Nano-Beam Diffraction (NBD)
SiGe
SOI
Strain
Ultra-Thin Body and Buried-oxide (UTBB)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83075
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Institution: National University of Singapore

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