Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 Passivation

Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 Passivation

10.1149/05302.0075ecst

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Bibliographic Details
Main Authors:	Kyaw, L.M., Liu, Y., Bera, M.K., Ngoo, Y.J., Tripathy, S., Chor, E.F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83766
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Institution:	National University of Singapore

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