High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process
10.1109/ICSICT.2006.306122
Saved in:
Main Authors: | Zhang, Q.C., Huang, J.D., Wu, N., Chen, G.X., Hong, M.H., Bera, L.K., Zhu, C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83784 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Gate stack engineering of germanium mosfets with high-K dielectrics
by: WU NAN
Published: (2010) -
Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure
by: ZHANG QINGCHUN
Published: (2010) -
Pulsed laser annealing of ultra-shallow junctions in silicon-germanium
by: Tan, L.S., et al.
Published: (2014) -
Fabrication of ultra-shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing
by: CHONG YUNG FU
Published: (2011) -
Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
by: Ya Lim, P.S., et al.
Published: (2014)