Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

10.1002/pssc.200983452

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Tian, F., Chor, E.F.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	Conference or Workshop Item
منشور في:	2014
الموضوعات:	AlGaN/GaN Field effect transistors MIS heterostructures
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/83815
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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