AES analysis of silicon nitride formation by 10 keV N+ and N+ 2 ion implantation
10.1016/S0042-207X(96)00220-5
Saved in:
Main Authors: | Pan, J.S., Wee, A.T.S., Huan, C.H.A., Tan, H.S., Tan, K.L. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/95738 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
AES analysis of nitridation of Si(100) by 2-10 keV N+ 2 ion beams
by: Pan, J.S., et al.
Published: (2014) -
Secondary ion emission from silicon under 8 keV O2 + and Ar+ ion bombardment
by: Huan, C.H.A., et al.
Published: (2014) -
XPS study of incident angle effects on the ion beam modification of InP surfaces by 6 keV O2 +
by: Pan, J.S., et al.
Published: (2014) -
XPS studies on nitridation of InP(100) surface by N+ 2 ion beam bombardment
by: Pan, J.S., et al.
Published: (2014) -
Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
by: Chan, H.Y., et al.
Published: (2014)