Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN

Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN

10.1063/1.1573739

Saved in:

Bibliographic Details
Main Author:	Al-Douri, Y.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96419
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
by: Fan, W.J., et al.
Published: (2014)

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
by: Fan, W.J., et al.
Published: (2014)

Empirical pseudopotential study of electronic, positron, and structural properties of Ga1-xAlxN
by: Al-Douri, Y.
Published: (2014)

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser
by: Fan, W.J., et al.
Published: (2014)

Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells
by: Fan, W.J., et al.
Published: (2014)

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
by: Li, M. F., et al.
Published: (2013)

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
by: Fan, W.J., et al.
Published: (2014)

Electronic structures of AlGaN2 nanotubes and AlN-GaN nanotube superlattice
by: Pan, H., et al.
Published: (2014)

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
by: Whiteside, Matthew David
Published: (2021)

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
by: Patwal, Shashank
Published: (2021)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
by: Vicknesh, S., et al.
Published: (2014)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
by: Whiteside, Matthew, et al.
Published: (2021)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
by: Murugapandiyan, P., et al.
Published: (2020)

Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
by: Ashraf Uddin.
Published: (2008)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
by: Fernández-Rojas, Carlos J., et al.
Published: (2013)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications
by: Lingaparthi, R., et al.
Published: (2021)

Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD
by: Sun, W.H., et al.
Published: (2016)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
by: Zheng, Y., et al.
Published: (2020)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
by: Agrawal, M., et al.
Published: (2013)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
by: Ravikiran, L., et al.
Published: (2014)

Erratum: Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111) (Journal of Applied Physics (2002) 92 (3503))
by: Tripathy, S., et al.
Published: (2014)

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
by: Bera, L. K., et al.
Published: (2014)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
by: Liu, W., et al.
Published: (2014)

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
by: Liu, W., et al.
Published: (2014)

Material characterization of AlGaN/GaN based HEMT structures
by: Nur Hidayat Bin Hatwi
Published: (2014)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
by: Yin, W.-Y., et al.
Published: (2014)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
by: Liu, X, et al.
Published: (2020)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014)

Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
by: Aabdin, Zainul, et al.
Published: (2024)

Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
by: Tripathy, S., et al.
Published: (2014)

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
by: Hou, Yong Tian, et al.
Published: (2014)

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
by: Hou, Yong Tian, et al.
Published: (2014)