Impact of oxide defects on band offset at GeO2 /Ge interface

Impact of oxide defects on band offset at GeO2 /Ge interface

10.1063/1.3115824

Saved in:

Bibliographic Details
Main Authors:	Yang, M., Wu, R.Q., Chen, Q., Deng, W.S., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96874
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces
by: Wang, S.J., et al.
Published: (2014)

Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study
by: Yang, M., et al.
Published: (2014)

Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects
by: Yang, M., et al.
Published: (2014)

Energy-band alignments at LaAlO3 and Ge interfaces
by: Mi, Y.Y., et al.
Published: (2014)

Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration
by: Fang, L.W.-W., et al.
Published: (2014)

Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation
by: Chen, Q., et al.
Published: (2014)

Tuning photoluminescence of Ge/GeO2 core/shell nanoparticles by strain
by: Yuan, C. L., et al.
Published: (2012)

Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure
by: Yuan, C. L., et al.
Published: (2013)

First-principles study of ZrO2 Si interfaces: Energetics and band offsets
by: Dong, Y.F., et al.
Published: (2014)

The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
by: Chen, Qimiao, et al.
Published: (2020)

Interface study of high-k oxide and Ge for the future Ge based MOSFET device
by: DENG WENSHENG
Published: (2012)

Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe
by: Mi, Y.Y., et al.
Published: (2014)

Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary system
by: Fang, L.W.-W., et al.
Published: (2014)

Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate
by: Liu, Z.Q., et al.
Published: (2014)

Band gap tuning by a Ge interlayer in quantum well intermixing
by: Teng, J.H., et al.
Published: (2014)

Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well
by: Fan, Weijun, et al.
Published: (2020)

Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
by: Balakumar, S., et al.
Published: (2014)

Biaxial strain effect on band structures and optical properties of GeSn/Ge quantum well
by: Ting, Shi En
Published: (2024)

Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
by: Bose, Sumanta, et al.
Published: (2014)

The effect of processing parameters on properties of Bi2GeO 5 glass ceramics
by: Kantha P., et al.
Published: (2014)

The effect of processing parameters on properties of Bi2GeO 5 glass ceramics
by: P. Kantha, et al.
Published: (2018)

A 3 × 2 waveguide switch based on SiGe for C-band operation
by: Teng, J.H., et al.
Published: (2014)

Optical and physical properties of solgel-derived GeO2:SiO 2 films in photonic applications
by: Ho, C.K.F., et al.
Published: (2014)

Zn2GeO4 Nanorods synthesized by low-temperature hydrothermal growth for high-capacity anode of lithium battery
by: Feng, J.K., et al.
Published: (2014)

GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy
by: Oh, H.J., et al.
Published: (2014)

Native point defects and doping in ZnGeN2
by: Skachkov D., et al.
Published: (2017)

First principle study of Si and Ge band structure for UTB MOSFETs applications
by: Low, T., et al.
Published: (2014)

Effects of annealing on the valence band offsets between hafnium aluminate and silicon
by: Chiam, S.Y., et al.
Published: (2014)

Band alignment and thermal stability of HfO2 gate dielectric on SiC
by: Chen, Q., et al.
Published: (2014)

Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties
by: Han, Xu, et al.
Published: (2020)

Synthesis and structure characterization of ternary Zn2GeO4 nanowires by chemical vapor transport
by: Yan, Chaoyi, et al.
Published: (2012)

Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates
by: Zhang, Z., et al.
Published: (2014)

Native point defects and doping in ZnGeN2
by: Dmitry Skachkov, et al.
Published: (2018)

Interface engineering for high-k/Ge gate stack
by: Xie, R., et al.
Published: (2014)

Electronic band structure of Ge1-xSnx alloys
by: Yu, Cunyang
Published: (2018)

Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
by: Jiang, Y., et al.
Published: (2014)

Enhanced electrical properties of lead-free Bi2GeO5 ferroelectric glass ceramics by thermal annealing
by: Kantha P., et al.
Published: (2014)

Theoretical study on thermoelectric properties of Ge nanowires based on electronic band structures
by: Huang, W., et al.
Published: (2014)

Reversible phase transformation on Ge(111) surface by potential
by: Ye, J.H., et al.
Published: (2014)

Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix
by: Jie, Y.X., et al.
Published: (2014)