Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices

Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices

10.1063/1.2970036

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Bibliographic Details
Main Authors:	Darmawan, P., Chan, M.Y., Zhang, T., Setiawan, Y., Seng, H.L., Chan, T.K., Osipowicz, T., Lee, P.S.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/97111
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Institution:	National University of Singapore

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