Reliability of ultrathin (

by Samanta, S.K., Chatterjee, S., Choi, W.K., Bera, L.K., Banerjee, H.D., Maiti, C.K.
Published 2014

Microstructural characterization of rf sputtered polycrystalline silicon germanium films

by Choi, W.K., Teh, L.K., Bera, L.K., Chim, W.K., Wee, A.T.S., Jie, Y.X.
Published 2014

Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application

by Samanta, S.K., Tan, Z.Y.L., Yoo, W.J., Samudra, G., Lee, S., Bera, L.K., Balasubramanian, N.
Published 2014

Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

by Samanta, S.K., Singh, P.K., Yoo, W.J., Samudra, G., Yeo, Y.-C., Bera, L.K., Balasubramanian, N.
Published 2014

High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process

by Zhang, Q.C., Huang, J.D., Wu, N., Chen, G.X., Hong, M.H., Bera, L.K., Zhu, C.
Published 2014

Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

by Yeo, C.C., Cho, B.J., Joo, M.S., Whoang, S.J., Kwong, D.L., Bera, L.K., Mathew, S., Balasubramanian, N.
Published 2014

High quality single crystal Al-catalyzed Si nanowire

by Whang, S.J., Lee, S.J., Yang, W., Cho, B.J., Liew, Y.F., Li, K., Bera, L.K., Kwong, D.L.
Published 2014

N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

by Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K.
Published 2014

Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy films

by Choi, W.K., Bera, L.K., Chen, J.H., Feng, W., Pey, K.L., Yoong, H., Mi, J., Zhang, F., Yang, C.Y.
Published 2014

Laminated metal gate electrode with tunable work function for advanced CMOS

by Bae, S.H., Bai, W.P., Wen, H.C., Mathew, S., Bera, L.K., Balasubramanian, N., Yamada, N., Li, M.F., Kwong, D.L.
Published 2014

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

by Joo, M.S., Cho, B.J., Yeo, C.C., Chan, D.S.H., Whoang, S.J., Mathew, S., Bera, L.K., Balasubramanian, N., Kwong, D.-L.
Published 2014

Three-layer laminated metal gate electrodes with tunable work functions for CMOS applications

by Bai, W.P., Bae, S.H., Wen, H.C., Mathew, S., Bera, L.K., Balasubramanian, N., Yamada, N., Li, M.F., Kwong, D.-L.
Published 2014

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator

by Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. Krishna, Lin, Vivian Kaixin, Ang, Diing Shenp, Bhat, T. N., Yakovlev, N., Tripathy, Sudhiranjan
Published 2014

Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications

by Gupta, R., Yoo, W.J., Wang, Y., Tan, Z., Samudra, G., Lee, S., Chan, D.S.H., Loh, K.P., Bera, L.K., Balasubramanian, N., Kwong, D.-L.
Published 2014

Investigation of electrical properties of furnace grown gate oxide on strained-Si

by Bera, L.K., Mathew, S., Balasubramanian, N., Leitz, C., Braithwaite, G., Singaporewala, F., Yap, J., Carlin, J., Langdo, T., Lochtefeld, T., Currie, M., Hammond, R., Fiorenza, J., Badawi, H., Bulsara, M.
Published 2014

Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body

by Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Published 2014

Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition

by Choi, W.K., Chen, J.H., Bera, L.K., Feng, W., Pey, K.L., Mi, J., Yang, C.Y., Ramam, A., Chua, S.J., Pan, J.S., Wee, A.T.S., Liu, R.
Published 2014

Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channel-orientation and low temperature on device performance

by Singh, N., Lim, F.Y., Fang, W.W., Rustagi, S.C., Bera, L.K., Agarwal, A., Tung, C.H., Hoe, K.M., Omampuliyur, S.R., Tripathi, D., Adeyeye, A.O., Lo, G.Q., Balasubramanian, N., Kwong, D.L.
Published 2014

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

by Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang
Published 2013

Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

by Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Published 2014