Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G.S., Yeo, Y.-C.
Published 2014

Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe 2 using pulsed laser anneal

by Shi Ya Lim, P., Zhi Chi, D., Cai Wang, X., Yeo, Y.-C.
Published 2014

A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs

by Zhang, X., Ivana, Guo, H.X., Gong, X., Zhou, Q., Yeo, Y.-C.
Published 2014

Temperature independent current biasing employing TFET

by Guo, P.F., Yang, Y., Samudra, G., Heng, C.H., Yeo, Y.C.
Published 2014

A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

by Koh, S.-M., Wang, X., Thanigaivelan, T., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
Published 2014

Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs

by Koh, S.-M., Wang, X., Sekar, K., Krull, W., Samudra, G.S., Yeo, Y.-C.
Published 2014

Simulation and design of a germanium L-shaped impact-ionization MOS transistor

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

by Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C.
Published 2014

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

by Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

by Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C.
Published 2014

In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects

by Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C.
Published 2014

Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formation

by Yang, J.-J., Chen, J.-D., Wise, R., Yeo, Y.-C., Zhu, C.
Published 2014

Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
Published 2014

In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

by Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
Published 2014

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

by Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C.
Published 2014

Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

by Low, Tony, Li, M. F., Yeo, Y. C., Fan, Weijun, Ng, S. T., Kwong, Dim Lee
Published 2013

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

by Koh, S.-M., Zhang, P., Ren, S.-F., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
Published 2014