A mixing vector based an affine combination of two adaptive filters for sensor array beamforming

by Lu, S. T., Sun, J. P., Wang, G. H., Lu, Yilong.
Published 2013

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

by Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C.
Published 2014

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

by Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C.
Published 2014

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Device physics and performance optimization of impact-ionization metal-oxide-semiconductor transistors formed using a double-spacer fabrication process

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G.S., Yeo, Y.-C.
Published 2014

A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performance

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Simulation and design of a germanium L-shaped impact-ionization MOS transistor

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

by Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

by Wang, G.H., Toh, E.-H., Tung, C.-H., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Published 2014

Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering

by Toh, E.-H., Wang, G.H., Lo, G.-Q., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

by Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization region

by Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors

by Wang, G.H., Toh, E.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology

by Wang, G.H., Toh, E.-H., Wang, X., Hoe, K.-M., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Published 2014

Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors

by Wang, G.H., Toh, E.-H., Hoe, K.-M., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

by Toh, E.-H., Wang, G.H., Lo, G.-Q., Choy, S.-F., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

by Toh, E.-H., Wang, G.H., Chan, L., Sylvester, D., Heng, C.-H., Samudra, G.S., Yeo, Y.-C.
Published 2014

Reduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiation

by Wang, G.H., Wong, T.-C., Wang, X.-C., Zheng, H.-Y., Chan, T.-K., Osipowicz, T., Foo, Y.-L., Tripathy, S.
Published 2014

Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement

by Wang, G.H., Toh, E.-H., Foo, Y.-L., Tripathy, S., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement

by Wang, G.H., Toh, E.-H., Tung, C.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014