Influence of the excess Al content on memory behaviors of Worm devices based on sputtered Al-rich aluminum oxide thin films

• المؤلفون الرئيسيون: Liu, Z., Liu, P., Li, H. K., Chen, T. P.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104149; http://hdl.handle.net/10220/24656

Reactive sputtering has been used to synthesize Al-rich Al2O3 thin films. After post-deposition thermal annealing, the excess Al content forms Al nanocrystals (nc-Al) which are dispersed in the Al2O3 matrix. In the Al/Al-rich Al2O3/p-Si structure, the current conduction which follows a Schottky emis...